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1 p-channel 30 v (d-s) mosfet with schottky diode features ? h a logen-free according to iec 61249-2-21 definition ? little foot ? plus power mosfet ? 1 00 % r g tested ? compliant to rohs directive 2002/95/ec applicat ions ? b attery management in notebook pc ? non-synchronous buck converter in hdd notes: a. based on t c = 2 5 c. b. surface mounted on fr4 board. c. t ? 10 s. d. maximum under steady state conditions is 120 c/w. mosfet product s ummary v ds (v) r ds(on) ( ? ) i d (a ) a q g (t yp.) - 30 0.068 at v gs = - 10 v - 4.6 4.6 0.110 at v gs = - 4.5 v - 3. 4 schottky product summary v ka (v) v f (v) diod e fo rward voltage i d (a) a 30 0.44 v at 1 a 2 absolute maximum ratings (t a = 25 c, unless otherwise noted) p a rameter symbol limit unit drain-source voltage (mosfet) v ds - 3 0 v re verse voltage (schottky) v ka - 30 gat e-source voltage (mosfet) v gs 20 continuous d rain current (t j = 150 c ) (mosfet) t c = 25 c i d - 4.6 a t c = 70 c - 3.6 t a = 2 5 c - 3.8 b, c t a = 7 0 c - 3 b, c pulsed dr a in current (mosfet) (t = 300 s) i dm - 2 0 contin uous source current (mosfet diode conduction) t c = 25 c i s - 2 t a = 2 5 c - 1.4 b, c a v erage forward current (schottky) i f - 1.4 b pulsed f o rward current (schottky) i fm - 2 maxim um p ower dissipation (mosfet and schottky) t c = 25 c p d 2.75 w t c = 70 c 1.75 t a = 2 5 c 1.75 b, c t a = 7 0 c 1.10 b, c ope r ating junction and storage temperature range t j , t stg - 55 to 150 c ak a k sd g d so- 8 5 6 7 8 to p v ie w 2 3 4 1 k a s g d p-channel mosfet thermal resist ance ratings p aramet er symbol typical maximum unit maximum junction-to-ambi ent (mosfet and schottky) b, c , d r thj a 60 71. 5 c/w maximum junction-to-foot (d rain) (mosfet and schottky) r thjf 35 45 www.din-tek.jp dt m44 83 s
2 not e s: a. p ulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed b y design, not subject to production testing. mosf et specifications (t j = 25 c, un less otherwise noted) param eter sym bol t est c onditions min. typ. max. un it static drain-source breakdo wn v oltage v ds v ds = 0 v, i d = - 250 a - 30 v v ds temper ature coefficient ' v ds/tj i d = - 250 a - 20 mv/c v gs(t h) temperature co efficient ' v gs(th)/tj 3.9 gate t h reshold v oltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 1.8 - 2.5 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na z ero gate v oltage drain current i dss v ds = - 30 v , v gs = 0 v - 1 a v ds = - 30 v , v gs = 0 v , t j = 75 c - 10 on-state drain current a i d(o n ) v ds t - 5 v, v gs = - 10 v - 5 a drain-source on-state re sista nce a r ds(on) v gs = - 10 v, i d = - 3.6 a 0.055 0.068 : v gs = - 4.5 v , i d = - 2.8 a 0.092 0.110 f orw ard transconductance a g fs v ds = - 15 v, i d = - 3.6 a 6.5 s dynam i c b input capacita n ce c iss v ds = - 15 v , v gs = 0 v, f = 1 mhz 350 pf output c apacitance c oss 75 re v erse t ransfer capacitance c rss 63 to tal gate charge q g v ds = - 15 v, v gs = - 10 v , i d = - 5 a 91 4 nc v ds = - 15 v, v gs = - 4.5 v , i d = - 5 a 4.6 7 gate-s ource charge q gs 1.3 gate-dr a in charge q gd 2.1 ga te re sistance r g f = 1 mhz 1.5 7.3 14.5 : tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v , r l = 3 : i d # - 5 a, v gen = - 4.5 v, r g = 1 : 28 50 ns rise time t r 73 140 t ur n-off delay time t d(off) 12 24 fa l l time t f 816 tu r n - o n d e l ay t i m e t d( on) v dd = - 15 v , r l = 3 : i d # - 5 a, v gen = - 10 v, r g = 1 : 612 rise time t r 918 tu r n-off delay time t d(off) 12 24 fa ll time t f 612 drain- so urce body diode characteristics continous source-drain diode current i s t c = 25 c - 4.6 a pulse diod e forward current a i sm - 20 body diode voltage v sd i s = - 2 a , v gs = 0 v - 0.83 - 1.2 v body diode reverse recovery time t rr i f = - 2 a, di/dt = 100 a/s , t j = 25 c 12 24 ns body diode re verse recovery charge q rr 612 n c reverse recovery fall time t a 8 ns re v erse reco very rise time t b 4 zzzglqwhnms '7 0 6
3 stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. schott ky specifications (t j = 25 c, unless otherwise noted) pa ramet e r sym bol test conditions min. typ. max. unit forward voltage drop v f i f = 1 a 0.36 0 .44 v i f = 1 a, t j = 1 25 c 0.29 0.35 maximum reverse leakage current i rm v r = 30 v 0.03 0.2 ma v r = 30 v, t j = 75 c 0.6 5 v r = 30 v, t j = 125 c 7.5 60 j unction capacitance c t v r = 15 v 5.3 pf www.din-tek.jp dt m44 83 s
4 m o s fet typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current and gate voltage gate charge 0 4 8 12 16 20 0.0 1.0 2.0 3.0 4.0 5.0 i d - d rai n current (a) v ds - d r ain-to-source voltage (v) v gs = 10 v thru 5 v v gs = 3 v v gs = 4 v 0.000 0.030 0.060 0.090 0.120 0.150 0 2 4 6 8 10 r ds(on ) - o n -resistance () i d - d r ain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 2 4 6 8 10 v gs - g ate- to-source voltage (v) q g - t otal gate charge (nc) i d = 5 a v ds = 20 v v ds = 10 v v ds = 15 v transfer characteristics capacitance on-resistance vs. junction temperature 0 1.0 1.5 2.0 2.5 3.0 0.0 1.0 2.0 3.0 4.0 5.0 i d - d rai n current (a) v gs - g ate- to-source voltage (v) t c = 125 c t c = - 55 c t c = 25 c 0 120 240 360 480 600 0 6 12 18 24 30 c - c apacitance (pf) v ds - drain- to-source voltage (v) c iss c os s c rss 0.5 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 r ds(on ) - o n -resistance (normalized) t j - j uncti on temperature ( c) i d = 3.6 a v gs = 4 . 5 v v gs = 1 0 v www.din-tek.jp dt m44 83 s
5 mosfe t t ypical characteristics (25 c, unless otherwise noted) source-drain diod e fo rward voltage threshold voltage 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource c urrent (a) v sd - s ource- to-drain voltage (v) t j = 150 c t j = 25 c -0. 4 -0 .2 0.2 0.4 0.6 -50-250 255075100125150 v gs( t h) - variance (v ) t j -te m perature ( c) i d = 250 a i d = 5 m a 0 on-re sistan ce vs. gate-to-source voltage single pulse power, junction-to-ambient 0.0 0.1 0.2 0.3 0.4 0.5 02468 1 0 r ds(on ) - o n -resistance () v gs - gate- to-source voltage (v) t j = 125 c t j = 25 c i d = 3.6 a 0 10 20 30 40 50 0.001 0.01 0.1 1 10 po wer (w) time (s) safe operatin g area, junction-to-case 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - d rai n current (a) v ds - drain- to-source voltage (v) * v gs > mi ni mum v gs at which r ds(on ) is specified 100 ms limited by r ds( on ) * 1 ms i dm limited t c = 25 c sin g le pulse bvdss li mited 10 ms 10 s 1 s dc i d limited www.din-tek.jp dt m44 83 s
6 m o s fet typical characteristics (25 c, unless otherwise noted) * the power dissipatio n p d is based on t j(ma x ) = 150 c, using jun c tion-to-case thermal resistance, and is more useful in settling the upper di ssip ation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. cur r ent derating* 0 1 2 3 4 6 0 25 50 75 100 125 150 i d - d rai n current (a) t c - c ase temperatur e ( c) powe r deratin g, junction-to-foot 0.0 0.7 1.4 2.1 2.8 3.5 0 2 5 50 75 100 125 150 po wer (w) t c - c ase temperatur e ( c) pow e r derating, junction-to-ambient 0.00 0.25 0.50 0.75 1.00 1.25 025 5 075100125150 po wer (w) t a - a mbi ent temperature ( c) www.din-tek.jp dt m44 83 s
7 mosfe ts typical characte ristics (25 c, unless otherwise noted) no rmal ized thermal transient impedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0 .01 0 .1 1 10 100 1000 nor m alized effective transient thermal impedance sq uar e wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 sin g le pulse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 1 20 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rfa c e mo u nted normalize d thermal transient impedance, junction-to-foot 0.01 0.1 1 0.0001 0.001 0.01 0 .1 1 10 normalized effective transient thermal impedance squar e wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 sin g le pulse www.din-tek.jp dt m44 83 s
8 s c hottky typical characteristics (25 c, unless otherwise noted) reverse c u rrent vs. ju nction temperature 125 150 t j - j u nction temperat u re (c) ) a m( tnerr u c esre v er -i r 0 2 55 075100 0.000001 0. 00001 0. 0001 0.001 0.01 0.1 20 v 30 v for w ard voltage drop v f - for w ard v oltage drop ( v ) ) a ( tnerr u c dra w rof -i f 0.1 1 10 0.00 1 0.01 0 0. 1 0.2 0 . 3 0.4 0 . 5 t j = 25 c t j = 150 c capacitan c e ) f p( ecnaticapac noitcn u j- 0 100 200 300 400 500 0 6 12 1 8 24 30 v ka - re v erse v oltage ( v ) c t www.din-tek.jp dt m44 83 s
1 di m millimeter s inc hes min ma x min max a 1 .35 1.7 5 0.053 0.069 a 1 0 .10 0.2 0 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp
1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r eturn to inde x application note www.din-tek.jp
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